Materials, Process and Integration Options for Emerging Technologies

Materials, Process and Integration Options for Emerging Technologies

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Description: CMOS logic and memory scaling is dominated by functional materials and nanostructures. Emerging device technology needs: very high mobility, better electrostatic control, and improve on-off ratio. Emerging nano-technologies beyond CMOS are examined.

Materials and integration for advances photovoltaics, Non-planar and nano-wire devices, Unique capabilities for III-V device fabrication, MEMS/NEMS “zero leakage” devices are also discussed.

 
Author: Raj Jammy PhD (Fellow) | Visits: 2227 | Page Views: 2897
Domain:  High Tech Category: Semiconductors 
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Short URL: http://www.wesrch.com/electronics/pdfEL1SE1000YZGQ
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Contents:
SEMATECH/ISMI Symposium

Accelerating the next technology revolution

Materials, Process and Integration Options for Emerging Technologies
Raj Jammy PhD VP Materials and Emerging Technologies
Copyright �2009 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.

CMOS logic and memory scaling...
Dominated by functional materials and nanostructures
High-k / MG on Si & SiGe III-V FinFET, NW STEEP, NEMS, Graphene
Sensing Electrode B Sensing Electrode A

Bulk Si

Bulk Si

High

III-V

Si
Si SEMATECH Si Nanowire
Id,sat

Driving Electrode B Gap = 500�C, total radiation dose > 100 Mrad): Space, nuclear plants, engine electronics
11 September 2009

Benchmarking of future memory
Benchmarking
Nanowire Molecular [3]

Memory Operation of NEMS Device
0.12

10 Log Speed (read+write) [ns] 10 10 10

5

NAND

4

Current (A)

low power (fJ/bit) mid power (pJ/bit) hi power (nJ/bit)

0.08 0.04 0.00

3

NOR

DRAM FeRAM PCRAM 1 ReRAM 10 MRAM STT NEMS
2

Memory window ~5V

10

0

SRAM

Vpi = 4.25V

0

10

20

30

40
2

50

0

2

4

6

8

Target Region

Density AF

Voltage (V)
[3] J. E. Green Nature v. 445 p. 414 (2007).

[1] W. Y. Choi, and T.-J. King Liu IEDM p. 603 (2007). [2] A. Driskill-Smith, Y. Huai Future Fab p. 28 (2007).

11 September 2009

M/NEMS commercialization pyramid
MEMS Freq. Power Q Sensitivity kHz mW-W 107 High NEMS GHz pW 104 Highest

Physics Device Design Material and Process Development Process Integration at Device Level
Current |A|
1E-6 1E-7 1E-8 1E-9 1E-10 1E-11 2

Beam thickness = 25nm

Voltage (V) for Long Switch
3 4 5
L = 12m Electrode L = 12m Switch
r es ent ctu urr stru ic c ton ong no in l Mo ent r em inc

Air gap = 60nm

Amorphous metal

L = 4m Electrode

System Integration

1E-12

L = 4m Switch

0

5

10

15

Abrupt increment of

Characterization and Failure Analysis

Voltage (V) for Short Switch

Packaging to Product

TBD

� NEMS is a basic switch/sensor that is versatile � Same unit can be employed for a variety of applications
11 September 2009

current in short structures

20

SEMATECH bio-sensors/actuators

Application

Bio-sensor Bio-imager

Wireless Chemical Sensors

Nanofabrication of DNA sensors

Collaborator WU, MO � � �

Georgia Tech/Others Duke University/UT

Health focused bio-technology needs critical R&D Micro/nano fabrication is key for many bio-technology devices SEMATECH is engaged with collaborators on various bio-technology investigations

11 September 2009

SEMATECH roadmap for memory
1 Transistor 1 Transistor 1 MIM Cap DRAM
7nm
Gate Dielectric Drain

DRAM
Bit Line

Nano-wire Nano-tube MEMS memories
Sensing Electrode B Sensing Electrode A

W

or

d

n Li

e

Gate Electrode Source

Driving Electrode B

Driving Electrode A Width = 90nm

Si

Common

Gap =
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