InP DHBTs by Leveraging Heterogeneous Integration

InP DHBTs by Leveraging Heterogeneous Integration

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Description: Deep Sub-Micron CoSMOS technology overview: combines latest CMOS and InP DHBTs for high performance mixed signal design. Integration approach: Epitaxial transfer and fabrication of InP HBTs on top of fully fabricated CMOS - InP/Si BiCMOS Process flow Device performance Thermal Management Thermal Vias Metallic Sub-Collector (MSC) Extends Thermal Limits. HBTs CMOS Heterogeneous Interconnect Differential Amplifier Test vehicle Next generation development Thermal limits Metallic Sub-Coll.

 
Author: James Chingwei Li, HRL Laboratories LLC (Fellow) | Visits: 1877 | Page Views: 2093
Domain:  High Tech Category: Semiconductors Subcategory: HBT 
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Short URL: http://www.wesrch.com/electronics/pdfEL1SE145ACNDS
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Contents:
Leveraging Heterogeneous Integration with Deep Sub-Micron InP DHBTs James Chingwei Li
(310) 317-5820, jli@hrl.com

Y. Royter, T. Hussain, P.R. Patterson, J.R. Duvall, M.C. Montes, I. Valles, M.F. Boag-O'Brien, D. Le, D. Zehnder, E.F. Wang, D.A. Hitko, M. Sokolich, D.H. Chow, K.R. Elliott, P.D. Brewer

HRL Laboratories LLC, Malibu, CA 90265

2010 Communications Microsystems Optoelectronics Sensors Emerging Technologies Workshop
� 2010 HRL Laboratories, LLC. All Rights Reserved. (Subject to Government Rights under Part 27 of the FAR and Part 227 of the DFARS as provided in Contract No. FA8650-07-C-7714)

1

Outline
� Motivation � CoSMOS technology overview � Integration approach � Process flow � Device performance � HBTs � CMOS � Heterogeneous Interconnect � Test vehicle � Next generation development � Thermal limits � Metallic Sub-Collector � Summary

� 2010 HRL Laboratories, LLC. All Rights Reserved. (Subject to Government Rights under Part 27 of the FAR and Part 227 of the DFARS as provided in Contract No. FA8650-07-C-7714)

2

Motivation
ITRS Mixed Signal roadmap driving towards >300GHz BJTs and 25 mW/m2 power densities expected � Unacceptable maximum lattice temperatures >250 at peak Ft Present scaling trends cannot continue without radically different thermal management techniques Competitors pursuing: � Selective re-growth on insulator � Fine-pitch flip-chip � Methods that do not address the thermal problem

C InP SC

6.0E+11 5.0E+11 4.0E+11 FT (Hz) 3.0E+11 2.0E+11 G5 v1.1I Baseline G5 w/ 2E17 BCG and 1E17

Horizontal and Vertical Scaling Only Horizontal Scaling G4 Only
Scaled G4 EB1.2

Solving thermal issues on the nano-scale is critical to heterogeneous integration

1.0E+11 0.0E+00 1.0E-4

AE=0.12x4.0 m2, VCE=1.25 V
1.0E-3 1.0E-2 1.0E-1 Collector Current (A)

� 2010 HRL Laboratories, LLC. All Rights Reserved. (Subject to Government Rights under Part 27 of the FAR and Part 227 of the DFARS as provided in Contract No. FA8650-07-C-7714)

1.0 m
11

Conventional 120 nm InP HBT on InP TMAX=269� C B >150� C higher than desired

E

Metallic Sub-Collector (MSC) Extends Thermal Limits
� Minimize collector resistance (RC) and thermal resistance (RTH) � Eliminates self-heating concerns at 120 nm node (TJ300 GHz demonstrated BCB on Host Wafer (Future CMOS) Thermal Via

1E-4

60 50

1E-5

40 30

1E-6

20 10

1E-7 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Base-Emitter Voltage (V) 400

0

MSC HBT 0.5m Interconnect
FT,FMAX (GHz)

350 300 250 200

FT

Fabricated in November 2009

FMAX 150 100 50 0 1E-4 HBT213 Lot 1 Wafer 14 SPCM 5X041 AE=0.12x2.0m2 VCE=1.2V 1E-3 1E-2 1E-1

Scaled MSC HBTs demonstrate DC current gain (40) at 16% to 35% drive current of G4; 3X to 5X power savings

� 2010 HRL Laboratories, LLC. All Rights Reserved. (Subject to Government Rights under Part 27 of the FAR and Part 227 of the DFARS as provided in Contract No. FA8650-07-C-7714)

Collector Current (A)

13

Summary and Acknowledgements
� HRL's CoSMOS process represents a paradigm shift in SoC design � Extends utilization of both InP HBT and CMOS � Two fabs, one product � IBM CMOS and HRL HBT performance does NOT degrade � World class differential amplifier performance � Heterogeneous integration is a means to overcome traditional scaling limits of InP DHBTs
� This work was supported in part by DARPA through AFRL contract FA8650-07-C-7714 (CoSMOS). Opinions expressed here do not and are not meant to represent the opinion of the funding source(s). � Our thanks and appreciation to our sponsors � USAF/AFMC AFRL
� �

AFRL PM: Dr. Greg Creech Technical Staff: Dr. James Sewell

� DARPA MTO � PM: Dr. Mark Rosker

� 2010 HRL Laboratories, LLC. All Rights Reserved. (Subject to Government Rights under Part 27 of the FAR and Part 227 of the DFARS as provided in Contract No. FA8650-07-C-7714)

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