Metal Oxide Hetero Junction Operation  Nonvolatile Memory - MOHJO

Metal Oxide Hetero Junction Operation Nonvolatile Memory - MOHJO

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Description: In this electronics presentations show the next generations for Nonvolatile Memory. Role of Electrode Materials in Bipolar Resistive Switching Devices. Classification of MOHJO devices with device structure and free energy.

A positive V pulse will move the oxygen ion into the vacancies Located near the metal electrode interface and patching otherwise breaking M-O-M-O chains and thereby decrease the resistance while the negative pulse will movie the oxygen vacancies into the interface region, and piling them up at metal interface, and increase the resistance. In site TEM Observation of Oxygen Vacancy Motion. 4DS proprietary process yields columnar polycrystalline PCMO which is fully CMOS compatible & high throughput.

Metal Oxide Heterojunction Characteristics of MOHJO two type devices first type device have a fast response time, good retention, good endurance but poor tunable their have difference in second type device which have a excellent tunable and retention excellent.

 
Author: Lee Cleveland (Fellow) | Visits: 2450 | Page Views: 2529
Domain:  High Tech Category: Semiconductors Subcategory: Memory 
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Contents:
MOHJO™
Metal Oxide Hetero Junction Operation
Nonvolatile Memory

Lee Cleveland
Director of Device Engineering

4DS, Inc.

Next Generation of Nonvolatile Memory

Large storage
capacity, but slow
Potential new
technologies,
but high cost

ReRAM potential
Desired Zone
RRAM

Fast, but volatile
Source: Nikkei Electronics
2

Confidential 4D-S Pty Ltd

Role of Electrode Materials in
Bipolar Resistive Switching
Devices
TE
MOHJO
BE

Classification of MOHJO devices
Free energy

Device Structure

Type - I

> MOHJO

M/MO/M

Type - II

< MOHJO

M/MO/MO/M

Liao/Chen et al, Appl. Phys. Lett. 94, 253503 (2009).

MO

Liao/Chen et al, Appl. Phys. Lett. 94, 253503 (2009).

I-V Loop

Liao/Chen et al, Appl. Phys. Lett. 94, 253503 (2009).

Clock vs Counter Clockwise Loop

Gang/Chen et al., CHIN. PHYS. LETT. 27, No. 2 027301 (2010).

Type-I device: PCMO with non-reactive metal TE
Negative
pulse

Top Electrode
Interface Between the top
electrode and
the perovskite oxide film

Vacancy
Oxygen ion

Pervoskite film
Positive Pulse

Bottom Electrode

A positive V pulse will move the oxygen ion into the vacancies
Located near the metal electrode interface and patching otherwise
breaking M-O-M-O chains and thereby decrease the resistance while
the negative pulse will movie the oxygen vacancies into the interface
region, and piling them up at metal interface, and increase the
resistance.

Liao/Chen et al, Appl. Phys. Lett. 94,

Type –II device: Metal Oxide Heterojunction Operation

Metal oxide-1
Low Gibbs
Free Energy

Low R state
R1~ R2

Reset -Oxidation High R state
R1>>R2
Oxygen
vacancy

Oxygen Vacancy
Oxygen-Vacancy

Hetero-junction
oxygen

Depleted

recombination

Metal Oxide-2
Higher Gibbs
Free Energy

“1”

Regeneration of oxygen
vacancies

Set - Reduction

“0”

In situ TEM Observation of Oxygen Vacancy Motion

E

4DS proprietary process yields columnar
polycrystalline PCMO which is fully CMOS
compatible & high throughput

Metal Oxide
Heterojunction

P-N Junction

Gibbs Energy

Fermi energy

Space vacancy formation Space charge formation
Ion migration

Charge drift

Field and temperature
sensitive
Metastable or
Chemical reaction

Field and temperature
sensitive
Field dependent

Characteristics of MOHJO
devices
∆R
Response time
Retention
Endurance
Tunable

TYPE-I
Small
fast
Good
Good
Poor

TYPE-II
Large
fast
Excellent
Good
Excellent

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