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Damascene Process and Chemical Mechanical Planarization - CMP

 Muhammad Khan, Min Sung Kim
  7th-Mar-2017
Description: The transition from Aluminum to Copper: : - The primary motivation behind the transition is increased demand Performance-Copper has lower resistivity than Aluminum, Lower resistivity leads to higher performance. II. Scaling- Lower resistivity leads to lower Joule Heating, Allowing higher current densities and therefore smaller sizes. III. Reliability- Copper has lower activation energy than Aluminum, Copper is more resistive to Electromigration failures than Aluminum, Copper has higher thermal conductivity, providing efficient heat conduction paths.
Views: 1502
Domain: Electronics
Category: Semiconductors
Contributing Organization: University of Maryland
 ‐ More of their Presentations
Contents:
Damascene Process and
Chemical Mechanical Planarization
Muhammad Khan
Min Sung Kim

Background
 Traditionally, IC interconnects formed from Aluminum
 Interconnects produced by subtractive etching of blanket

Aluminum, defined by the photoresist pattern
 Over the past two decades, IC scaling and performance needs
necessitated the change in metal from Aluminum to Copper

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