MOSFET and IGBT are two switch mode power supply transistors. A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a field Effect Transistor that is typically formed by controlled oxidation of silicon. It uses insulated gates, which enabled changing conductivity with the variation of applied voltage as per application requirement. This property is used in amplifying or switching electric signals. An Insulated-gate Bipolar Transistor (IGBT) is a three terminal power semiconductor device, which is used as an electronic switch, consisting four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) structure without regenerative action. It is essentially a MOSFET controlling a Bipolar Junction Power Transistor (BJT) with both transistors on a single piece of silicon. The IC gate drivers generate the necessary voltage and current level required to accurately and efficiently activate the power stage in industrial, consumer, computer and automotive applications, motor drives, uninterruptible power supplies (UPS), and solar inverters.
Get Sample Copy of Report @ https://www.coherentmarketinsights.com/insight/request-sample/1838
Increasing growth in the electronic devices industry is a major driving factor for growth of the MOSFET and IGBT gates market
IC drivers of MOSFET and IGBT are primarily used in electronic devices as a switch and also as amplifiers i.e. to change an ongoing process to a higher voltage. Increasing demand for electronic devices is one of the key driving factors for growth of the market. For instance, according to 2015 report by Hong Kong Science and Technology Parks (HKSTP), the global consumer electronics market is projected to reach US$ 2,976 billion by 2020, with a CAGR of 15.4% in the forecast period (2015-2020). MOSFETs can operate at high frequencies and can perform fast switching applications with little turn-off losses. IGBT combines the simple gate-drive characteristics found in the MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor. IGBT gate are often used with amplifiers and to generate large power pulses, hence are useful in modern appliances such as electric cars, trains, variable-speed refrigerators, and air conditioners. Hence, these IC driver gates market is affected by growth in the electronic device market. In addition to this, increasing sales of electric vehicles is also expected to aid in growth of the market. For instance, according to Coherent Market Insights’ analysis, in 2017, the global sales of electric vehicle was 962 thousand units up from 695 thousands units in 2016.
Browse Complete Report @ https://www.coherentmarketinsights.com/ongoing-insight/mosfet-and-igbt-gate-drivers-market-1838
MOSFET and IGBT Gate Driver: Competitive Landscape
Key players operating in the global MOSFET and IGBT gate drivers market are Infineon Technologies, ON Semiconductor, STMicroelectronics, ROHM Semiconductor, NXP Semiconductors, Texas Instruments, Microchip, Power Integrations Inc., Vishay, Broadcom, Analog Devices, IXYS, Toshiba, Renesas, and Powerex.
MOSFET and IGBT Gate Driver: Taxonomy
By Product Type
Single Channel Gate Drivers
Half Bridge Gate Drivers
Full Bridge Gate Drivers
Three Phase Gate Drivers
Display & Lighting
The Middle East
Get Discount for Report @ https://www.coherentmarketinsights.com/insight/request-discount/1838
About Coherent Market Insights:
Coherent Market Insights is a prominent market research and consulting firm offering action-ready syndicated research reports, custom market analysis, consulting services, and competitive analysis through various recommendations related to emerging market trends, technologies, and potential absolute dollar opportunity.
Coherent Market Insights
1001 4th Ave,
Seattle, WA 98154