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EUV Mask Substrate Readiness For Sub 10 nm HP Nodes

 Abbas Rastegar
  9th-Sep-2018
Description: EUV mask blank performance is determined by many interdependent parameters of a substrate that need to be optimized simultaneously.
Views: 1181
Domain: Electronics
Category: Semiconductors
Contributing Organization: EUV Litho, Inc.
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Contents:
EUV Mask Substrate
Readiness For Sub 10 nm HP
Nodes
Abbas Rastegar
June 13th, 2018

/External Use
Applied Materials Confidential

Outline
▪ EUV mask substrate requirements


Flatness



Roughness



Defects

▪ EUV mask substrate manufacturing
▪ Progress in EUV mask substrate in Applied Materials
▪ EUV mask substrates for sub 10 nm nodes

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28 August, 2018