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FDSOI: A Low Power, High Performance Technology Scalable Down to 10NM

 L. Grenouillet
  5th-Jan-2018
Description: Compared to bulk and FinFETs, FDSOI benefits from its undoped channel for Gm/Gd and Vth mismatch, two key characteristics for analog devices.
Views: 943
Domain: Electronics
Category: Semiconductors
LithoVision 2018
Contents:
FDSOI: A LOW POWER, HIGH PERFORMANCE
TECHNOLOGY SCALABLE DOWN TO 10NM
L. Grenouillet, Silicon Component Division, CEA-Leti, FRANCE
3rd annual SOI Tokyo Workshop, May. 31st, 2017

SCALING OF CMOS TECHNOLOGY

M. Bohr et al (Intel) et al, 2011

• 3 waves of performance boosters:




Material, including mechanical stressors
High-k / metal gates (gate first or gate last)
Fully D ... See more

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