Go to Page # Page of 35

FDSOI: A Low Power, High Performance Technology Scalable Down to 10NM

 L. Grenouillet
  5th-Jan-2018
Description: Compared to bulk and FinFETs, FDSOI benefits from its undoped channel for Gm/Gd and Vth mismatch, two key characteristics for analog devices.
Views: 1322
Domain: Electronics
Category: Semiconductors
Contents:
FDSOI: A LOW POWER, HIGH PERFORMANCE
TECHNOLOGY SCALABLE DOWN TO 10NM
L. Grenouillet, Silicon Component Division, CEA-Leti, FRANCE
3rd annual SOI Tokyo Workshop, May. 31st, 2017

SCALING OF CMOS TECHNOLOGY

M. Bohr et al (Intel) et al, 2011

• 3 waves of performance boosters:




Material, including mechanical stressors
High-k / metal gates (gate first or gate last)
Fully D ... See more

Recent Presentations

Accelerating Adoption of SiC Power

The market has heard for many years about wide bandgap product roadmaps and concepts, touting that many possibilities could be available. However, you canít design in a PowerPoint

Guy Moxey
26 April, 2018
Annesha Majumder
25 April, 2018
...
25 April, 2018