Electronic Phase Transitions And Space Charge Doping In 2d Materials

Electronic Phase Transitions And Space Charge Doping In 2d Materials

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Description: A lot of rich physics but not much material variety. Not 2D in the strict sense. Complications for making materials, devices.

Insulator Metal transition: Change carrier density: Pressure, Chemical doping, Electrostatic doping. Graphene as a transparent conducting electrode. Electronic phase transitions at the flick of a switch.

Metal to Incomplete Superconductor.

 
Author: Abhay Shukla  | Visits: 338 | Page Views: 548
Domain:  High Tech Category: Semiconductors 
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Contents:
Electronic phase transitions and space charge
doping in 2D materials
Abhay Shukla
Institut de Minéralogie, de Physique des Matériaux et de Cosmoschimie
CNRS UMR 7590, Université Pierre et Marie Curie, Paris 6

2D materials yesterday
• Carriers confined to the vicinity of junctions

• Variation of carrier concentration.


• Well-defined interface.

2D materials yesterday
• A lot of rich physics but not much material
variety
• Not 2D in the strict sense
• Complications for making materials, devices.

Oxide interfaces

2D materials today

Novoselov et al. PNAS 2005

2D materials in my group
JOHAN BISCARAS, ANDREA PARADISI,
ZHESHENG CHEN, EDOARDO STERPETTI

2D Materials
Two dimensional (2D) materials: insulators, semiconductors, semi-metals, metals…

Graphene

Semi-metal

Good
transport property

MoS2

Transition
metal
dichalcogenide
s
(TMDC)

+

InSe

III-VI
semiconductor
s

Good photo-electric conversion

Heterostructure

Stacking
different 2D
materials

= Good photo-detector

2D Materials: Fabrication
Anodic Bonding
for making 2D
materials

O2Na+
Na2O =>2Na+ + O2-

Shukla, Kumar, Mazher, Balan, Solid State Commun, 149 , 718, 2009
Gacem, Boukhicha, Chen, Shukla, Nanotechnology 23, 50579, 2012

2D Materials: Fabrication
MoS2

GaSe

NbSe2

2L
1L

1L

1L

2L 3L
2L

GaS

CuGeO3

1L

Bi2Sr2CaCu2Ox

1L
1L

3L

1L
1L

1L

2D Materials: Electrostatic doping
or
Band gaps, metals and insulators
Insulator Metal transition:
Change carrier density
• Pressure
• Chemical doping
• Electrostatic doping

Doping

Induced charge ~ VGεr/d

Ahn, Triscone, Mannhart,
Reviews of Modern
Physics (2006)

Doping

VG
d

Electrostatic doping techniques
SiO2 (300nm) on Si.
Maximum doping : 1012 cm-2

Al2O3, HfO2, etc.
Maximum doping : 1013 cm-2 for HfO2.

Liquid electrolyte
Maximum doping > 1014 cm-2.

Space Charge doping: Graphene

• Commercial CVD graphene
• borosilicate or soda-lime glass

Reversible, Ambipolar

Paradisi, Biscaras and Shukla, Applied Physics Letters, 107, 143103 (2015)

Graphene as a transparent
conducting electrode
Raman mapping of peak intensity ratio

MoS2 : Electronic phase
transitions at the flick of a switch

Doping

Insulator to Metal

Metal to Incomplete Superconductor

Confirm Superconductivity

Superconductivity in few layer MoS2

Iwasa group
Taniguchi group

Ye et al. Science (2012)
Taniguchi et al. APL (2011)

Biscaras, Chen, Paradisi and Shukla, Nature Communications
6:8826 doi: 10.1038/ncomms9826 (2015)

Perspectives
• Other materials
• Other phase transitions:
charge density wave, topological …
• Other interactions: correlations, magnetism
• Applications

Acknowledgements
funding
• ANR SUPERTRAMP
• LABEX MATISSE
facilities
• INSP electromagnet
• ENS Ulm Clean room