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B2H6 PLAD Doped PMOS Device Performance

 Z. Fang, T. Miller, E. Winder, H. Persing, E. Arevalo, A. Gupta, T. Parrill, and V. Singh
  23rd-Aug-2007
Views: 2471
Domain: Electronics
Category: Semiconductors
Contents:
B2H6 PLAD Doped PMOS Device Performance
Z. Fang, T. Miller, E. Winder, H. Persing, E. Arevalo, A. Gupta, T. Parrill, and V. Singh
Varian Semiconductor Equipment Associates Inc., 35 Dory Road, Gloucester, MA 01930, USA

S. Qin and A. McTeer
Micron Technology Inc., 8000 S. Federal Way, Boise, ID 83707, USA
Abstract. Plasma doping (PLAD) achieves high wafer throughput by directly extracting ions acro ... See more

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