Interview with Intel's Mark Bohr on hi-k/metal gates and 45nm

 Aida Jebens
  2nd-Feb-2007
 1674
In one of the biggest advancements in fundamental transistor design, Intel Corporation revealed that it is using two dramatically new materials to build the insulating walls and switching gates of its 45 nanometer (nm) transistors. In this video, Mark Bohr, Intel Senior Fellow, delineates the importance of this technology and the scale of the accomplishment of Intel’s researchers. Hundreds of millions of these microscopic transistors – or switches – will be inside the next generation Intel® Core™ 2 Duo, Intel Core 2 Quad, and Xeon® families of multi-core processors. The company also said it has five early-version products up and running -- the first of fifteen 45nm processor products planned from Intel. Click here to see video.
If your Web browser does not support automatic linking, copy the URL, http://vstream1.vlsiresearch.com/public/mark_bohr_070126/mark_bohr_index.htm into the address bar of your browser.
Domain: Electronics
Category: Semiconductors
Contact Person Address: VLSI Research Inc
Posted By: Aida Jebens and Contact Aida Jebens
Tuesday, November 14, 2017, Fairmont San Jose
170 S Market St, San Jose, CA 95113

Recent Press Releases

19 October, 2017

oneM2M deployments accelerating IoT ...

Interoperability, interworking and security will be main focus of event Sophia Antipolis, France, 19 October 2017: Real-world deployments using oneM2M specifications will be demons

19 October, 2017

Goodman Masson overhauls IT estate m...

With over hundreds of endpoints to manage, the financial recruiter sought a solution to provide the most efficient IT infrastructure management and supportLONDON, 19th October 2017

19 October, 2017