Interview with Intel's Mark Bohr on hi-k/metal gates and 45nm

 Aida Jebens
In one of the biggest advancements in fundamental transistor design, Intel Corporation revealed that it is using two dramatically new materials to build the insulating walls and switching gates of its 45 nanometer (nm) transistors. In this video, Mark Bohr, Intel Senior Fellow, delineates the importance of this technology and the scale of the accomplishment of Intel’s researchers. Hundreds of millions of these microscopic transistors – or switches – will be inside the next generation Intel® Core™ 2 Duo, Intel Core 2 Quad, and Xeon® families of multi-core processors. The company also said it has five early-version products up and running -- the first of fifteen 45nm processor products planned from Intel. Click here to see video.
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Domain: Electronics
Category: Semiconductors
Contact Person Address: VLSI Research Inc
Posted By: Aida Jebens and Contact Aida Jebens
Tuesday, November 14, 2017, Fairmont San Jose
170 S Market St, San Jose, CA 95113

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