Share  Email
Leti IEDM 2016 Paper Says New FDSOI Light-sensing Technique Can Make Transistors Far More Sensitive to Visible Light

Leti IEDM 2016 Paper Says New FDSOI Light-sensing Technique Can Make Transistors Far More Sensitive to Visible Light

Release Date: 
Visits: 154
Press Release Summary:  Leti has developed a new light-sensing device that integrates photodiodes below the buried oxide of FDSOI transistors, making the transistors very sensitive to visible light. Photodiodes were co-integrated in the SOI substrate, replacing conventional FDSOI transistor backgate, an architecture that may lead not only to very small pixels with maximized fill factor, but also to more complex light-detection functions.  
Click here to view Text Version
If you see a loading image, please wait or try again by refreshing this page after sometime. Note : Best viewed in FF3 or above, IE7 or above
Important Tags: 

Leti

FDSOI

light-sensing

IEDM

Domain:  High Tech Category: Semiconductors Subcategory: Material Science 
Published Date: 7th-Dec-2016  
Contributing Organization: Leti

Posted By: Amelie Ravier  | Contact Amelie Ravier Short URL: https://www.wesrch.com/electronics/prpdfEL1SE1P5TVIVM
 Recent Press Releases