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Wide Bandgap GaN Epitaxy Energy Efficiency

 Christian Wetzel
  5th-Sep-2012
Description: Energy efficiency and green technology with wide band gap GaN-based epitaxy - Phosphor-Free White, Replace rare earth phophors, Avoid Stokes shift losses, Push for wavelength and power, Polarized emitters, Full spectrum emitters, New defect reduction approach.
Views: 4213
Domain: Energy
Category: Lighting
Contributing Organization: SEMI
 ‐ More of their Presentations
LithoVision 2018
Contents:
Energy efficiency and green
technology with wide bandgap
GaN-based epitaxy
Christian Wetzel
Future Chips Constellation,
Smart Lighting Engineering Research Center,
Department of Physics, Applied Physics and Astronomy
Rensselaer Polytechnic Institute, Troy, NY, USA

Semicon West
San Francisco, CA
July 10, 2012

C.Wetzel

Rensselaer
CW_2011-04-18_1231.c
CW_2012-06-09_1138.c

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